SEMICONDUCTOR DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device for electrostatic discharge protection is provided to minimize melting of a contact plug and increase the capacity of accumulating current according to electrostatic discharge by including a vertical low density junction region for increasing the depth of a junction region connected to an input pin. CONSTITUTION: A gate electrode(130) is disposed on a semiconductor substrate(100) of the first conductivity type. High density regions(170) of the second conductivity type are formed in the semiconductor substrate at both sides of the gate electrode. A vertical low density region(500) is formed in the semiconductor substrate, surrounding at least one of the high density regions. The vertical low density region has an impurity density lower than that of the high density regions and a depth greater than that of the high density regions.