| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that PFC (perfluorocarbon) and HFC (hydrofluorocarbon) used as the etching gas of a silicon oxide film or a silicon nitride film will be limited to use or become unavailable in the future due to environmental regulations. <P>SOLUTION: In a region where plasma treatment is performed by introducing gas containing fluorine as a constitutive element as the material gas of etching, the plasma of gas containing fluorine is caused to react on carbon 112 under a solid state to generate molecular chemical species of CF<SB>4</SB>, CF<SB>2</SB>, CF<SB>3</SB>, C<SB>2</SB>F<SB>4</SB>, and the like, used for etching. <P>COPYRIGHT: (C)2003,JPO |
