| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of improving the capability and the mobility by using a rapidly sloped retrograde well. CONSTITUTION: A well region(47) is formed in a semiconductor substrate(41). The first and second Ge ion implanted layer(49,51) having different depth are formed in the well region(47). A gate electrode(55) is formed on the substrate. An LDD(Lightly Doped Drain) layer(57) and a halo implanted layer(59) are sequentially formed in the substrate. After forming a spacer(63) at both sidewalls of the gate electrode, a source/drain(65) is formed. Then, a metal silicide layer(67) is formed on the surface of the source/drain and the gate electrode.
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