发明名称 Semiconductor apparatus
摘要 An object of the invention is to provide a semiconductor apparatus which simplifies a structure and reduces a possibility of occurrence of manufacture defect. Two of a first TFT and a second TFT which adjoins each other in a first direction are integrated in one semiconductor piece and share a source region electrically connected to a signal line and are formed in a symmetric shape in relation to a reference plane. Two scanning lines which extend in a second direction perpendicular to the first direction and are electrically connected to channel regions of the first and second TFTs and auxiliary capacitor electrodes for forming auxiliary capacitor between the auxiliary capacitor electrodes and drain electrodes electrically connected to the first and second TFTs are symmetrically arranged in relation to the reference plane.
申请公布号 US2003173629(A1) 申请公布日期 2003.09.18
申请号 US20030385465 申请日期 2003.03.12
申请人 GOTOH MASAHITO 发明人 GOTOH MASAHITO
分类号 G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 主分类号 G02F1/1368
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