发明名称 |
Method and apparatus for asymmetric gas distribution in a semiconductor wafer processing system |
摘要 |
A method and apparatus for processing a workpiece in a chamber by providing an asymmetric flow of process gas and processing the workpiece with the process gas. The asymmetric flow counteracts a non-uniform distribution of reactive species in the chamber. The asymmetric flow can be accomplished by introducing the process gas through a plurality of gas nozzles that communicate through a side wall of the chamber proximate a pump port while pumping gas with a pump coupled to the pump port. The inventive method can be used with a conventional processing chamber by only opening the gas nozzles closest to the pump and blocking any other gas nozzles. Alternatively, the method can be implemented in a processing chamber having gas nozzles located only proximate the pump port.
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申请公布号 |
US6620289(B1) |
申请公布日期 |
2003.09.16 |
申请号 |
US19990300563 |
申请日期 |
1999.04.27 |
申请人 |
APPLIED MATERIALS, INC |
发明人 |
YAN CHUN;YE YAN;MA DIANA XIAOBING |
分类号 |
C23C16/44;C23C16/455;H01J37/32;H01L21/00;(IPC1-7):H01L21/306;C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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