发明名称 Method and apparatus for asymmetric gas distribution in a semiconductor wafer processing system
摘要 A method and apparatus for processing a workpiece in a chamber by providing an asymmetric flow of process gas and processing the workpiece with the process gas. The asymmetric flow counteracts a non-uniform distribution of reactive species in the chamber. The asymmetric flow can be accomplished by introducing the process gas through a plurality of gas nozzles that communicate through a side wall of the chamber proximate a pump port while pumping gas with a pump coupled to the pump port. The inventive method can be used with a conventional processing chamber by only opening the gas nozzles closest to the pump and blocking any other gas nozzles. Alternatively, the method can be implemented in a processing chamber having gas nozzles located only proximate the pump port.
申请公布号 US6620289(B1) 申请公布日期 2003.09.16
申请号 US19990300563 申请日期 1999.04.27
申请人 APPLIED MATERIALS, INC 发明人 YAN CHUN;YE YAN;MA DIANA XIAOBING
分类号 C23C16/44;C23C16/455;H01J37/32;H01L21/00;(IPC1-7):H01L21/306;C23C16/00 主分类号 C23C16/44
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