| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element that has a high light emission output in an ultraviolet region, has a wide light emission spectrum, and has superb productivity. <P>SOLUTION: The nitride semiconductor light-emitting element has an n-type nitride semiconductor layer 103, a p-type nitride semiconductor layer 105, and a light emission layer 104 provided therebetween. The light emission layer 104 contains p-type conductivity Al<SB>x</SB>Ga<SB>1-x</SB>N (0≤x≤1) here Mg is doped, and there is a light emission peak in an ultraviolet region at 400 nm or less. <P>COPYRIGHT: (C)2003,JPO |
