| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method, capable of forming a resistance element whose sheet resistance is high by using a simple method. <P>SOLUTION: When a first semiconductor layer and a second semiconductor layer, whose impurity concentration is high than that of the first semiconductor layer, are formed on a semi-insulating substrate and the resistance element is formed on the second semiconductor layer, an electrode of the resistance element is formed on the region of the second semiconductor layer in which region the resistance element is to be formed, and the region is electrically isolated. Impurity ions are implanted in this region whose surface is covered with the second semiconductor layer, and the resistance element is formed. After the impurity ions are implanted, a processing such as conventional thermal processing is not conducted. <P>COPYRIGHT: (C)2003,JPO</p> |
