| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-frequency device, such as the high-frequency inductor, high-frequency transformer, transmission-line device, etc., usable in such a high-frequency band (GHz band) that has been considered to be difficult to be used for the device. <P>SOLUTION: When a microstrip line type transmission line, etc., is constituted by using a laminated film of a ferromagnetic metallic film and an antiferromagnetic thin oxide film, action of the antiferromagnetic thin oxide film as dielectrics can be utilized. At the same time, ferromagnetic resonance frequency of the ferromagnetic metallic film can be raised to a significantly high frequency by inducing large one-directional magnetic anisotropy through ferromagnetic/antiferromagnetic exchange bonding, and an extremely effective means for widening the band of the transmission line can be obtained. <P>COPYRIGHT: (C)2003,JPO |
