SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the leak current of a field-effect transistor is reduced by using a GaN-based semiconductor whose gate insulation film is made of a GaN-based semiconductor thermal oxide film and the reliability and the operation voltage of an element are improved. SOLUTION: This insulated gate FET has a structure that the GaN-based semiconductor thermal oxide film and an insulation film are formed in sequence in a gate electrode formation area on a GaN-based semiconductor, and a gate electrode is formed thereon. COPYRIGHT: (C)2003,JPO