| 摘要 |
PROBLEM TO BE SOLVED: To provide an estimation method of a BMD size in a silicon wafer which can estimate accurately the BMD size so fine in a silicon wafer that a conventional method cannot detect it. SOLUTION: This estimation method is provided with a first step, a second step, a third step and a fourth step. In the first step, after a plurality of silicon wafers different in the BMD sizes and densities are intentionally contaminated by Fe of prescribed concentration, residual Fe concentration in the silicon wafer after heat treatment under a prescribed heat treatment condition is measured, thereby previously obtaining the correlation of the residual Fe concentration to the BMD size and density. In the second step, after the intentional contamination of Fe and heat treatment are applied to the silicon wafer as an estimation object under the same condition as the first step, the residual Fe concentration is measured. In the third step, after heat treatment is performed in order to grow the BMD in the sillicon wafer as the estimation object to a detectable size, the BMD density in the wafer is measured. In the fourth step, the BDM size in the silicon wafer as the estimation object is estimated from the residual Fe concentration obtained by the second step and the BMD density obtained by the third step on the basis of the correlation. COPYRIGHT: (C)2003,JPO
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