发明名称 COMPOSITION FOR FORMING FILM, METHOD OF FORMING FILM, AND INSULATION FILM OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an insulation film of a semiconductor device which has a low dielectric constant and high heat resistance and has mechanical strength and adhesiveness high enough to be tolerable to a CMP process. SOLUTION: The composition for forming a film contains a modified silicone compound expressed by a general formula (1). COPYRIGHT: (C)2003,JPO
申请公布号 JP2003257962(A) 申请公布日期 2003.09.12
申请号 JP20020054363 申请日期 2002.02.28
申请人 MITSUI CHEMICALS INC 发明人 FUNAKI KATSUHIKO;SHINDO KIYOTAKA
分类号 C08G77/04;H01L21/312;(IPC1-7):H01L21/312 主分类号 C08G77/04
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