发明名称 |
COMPOSITION FOR FORMING FILM, METHOD OF FORMING FILM, AND INSULATION FILM OF SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide an insulation film of a semiconductor device which has a low dielectric constant and high heat resistance and has mechanical strength and adhesiveness high enough to be tolerable to a CMP process. SOLUTION: The composition for forming a film contains a modified silicone compound expressed by a general formula (1). COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003257962(A) |
申请公布日期 |
2003.09.12 |
申请号 |
JP20020054363 |
申请日期 |
2002.02.28 |
申请人 |
MITSUI CHEMICALS INC |
发明人 |
FUNAKI KATSUHIKO;SHINDO KIYOTAKA |
分类号 |
C08G77/04;H01L21/312;(IPC1-7):H01L21/312 |
主分类号 |
C08G77/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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