| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem of a semiconductor element being adversely affected due to a shock by wire bonding, since conductors are connected to electrodes on the surface of the semiconductor element by wire bonding in the manufacturing method of a semiconductor device. <P>SOLUTION: When conductive plates 38 and 39 on the surface of the semiconductor element 32 are formed in the manufacturing method of the semiconductor device, one conductive plate 50 is half-etched and back-etched. The conductive plates 38 and 39 are connected to connection regions 36 and 37 by fixing the conductors 40 and 41 with solder. Thus, wire bonding work on the surface of the semiconductor element 32 can be omitted completely, and therefore the shock to the semiconductor element 32 due to wire bonding can be eliminated. <P>COPYRIGHT: (C)2003,JPO |
