| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a metal bump on a semiconductor surface. <P>SOLUTION: A barrier layer is deposited over a layer of passivation including an opening to a contact pad formed in the layer of passivation. A column formed of three metal layers is formed by overlying the barrier layer and aligned with contact pad and having a diameter, that is about equal to the surface of the contact pad. The three metal layers of the column comprises, in succession when proceeding from the layer that is in contact with the barrier layer, a layer of pillar metal, a layer of under bump metal and layer of solder metal. The layer of pillar metal is reduced in diameter, the barrier layer is selectively removed from the surface of the layer of passivation, and thereafter the reflow of the solder metal is performed, thus completing the formation of the solder bump. <P>COPYRIGHT: (C)2003,JPO |
