| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which restrains the amount of hydrogen occluded in a barrier film of buried wiring by a damascene process, and a semiconductor device obtained by the method. SOLUTION: The semiconductor device has a wiring structure wherein a metal film 16 is embedded in a wiring trench 14 formed in an interlayer insulating film 13 whose surface is flattened via a barrier film 15. The upper end 15a of the barrier film 15 is covered with a film 16' formed without being exposed to a hydrogen atmosphere. The upper end 15a of the barrier film 15 is covered with, e.g. a metal film formed by a plating method or an organic film formed by a coating method. COPYRIGHT: (C)2003,JPO
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