发明名称 HEAT TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus which has a high degree of freedom in selection of an installation site while being capable of maintaining the inside of a furnace extremely clean, with the temperature of a wall of the furnace being low. SOLUTION: A heat treatment apparatus comprises a jig to mount a semiconductor substrate, a housing which stores the jig and the semiconductor substrate and forms a reaction chamber, a reaction gas introduction means for supplying a reaction gas into the housing, a heater provided around the housing, a partition wall which is provided between the heater and the housing and forms a sealed space together with the housing, a cooling medium introduction means for introducing a cooling medium into the sealed space between the partition wall and the housing, a cooling medium exhaust means for exhausting the cooling medium from the sealed space, and a temperature control means for controlling the wall face temperature of the housing. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003257956(A) 申请公布日期 2003.09.12
申请号 JP20020061070 申请日期 2002.03.06
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 KUROKAWA AKIRA
分类号 H01L21/22;H01L21/31;(IPC1-7):H01L21/31 主分类号 H01L21/22
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