DEVICE AND METHOD FOR ANISOTROPICALLY PLASMA ETCHING A SUBSTRATE, PARTICULARLY A SILICON BODY

摘要

Disclosed are a method for anisotropically plasma etching a substrate (59), particularly a silicon body, and a device for carrying out the inventive method. Said device comprises a chamber (53) and a plasma source for generating a high frequency electromagnetic alternating field, and a reaction area (20) for generating a plasma with reactive species inside the chamber (53). Said reactive species are created by the action of the alternating field on an etching gas and a passivating gas which is introduced particularly simultaneously thereto but in a spatially separated manner. Said device also comprises a means (5, 62, 63) with which at least one first sector (23, 33, 43) which is impinged upon by the etching gas and at least one second sector (22, 32, 42) which is impinged upon by the passivating gas are defined in the reaction area (20). The device further comprises a mixing area (21) which is arranged downstream from the reaction area (20) and in which the reactive species created from the caustic gas in the first sector (23, 33, 43) are mixed with the reactive species created from the passivating gas in the second sector (22, 32, 42) before acting on the substrate (59).