| 摘要 |
A circuit for generating a reference voltage in a memory device includes a switching section, a first voltage generator, a second voltage generator and a comparator. The switching section controls a supply of a power supply voltage in response to a control signal. The first voltage generator generates a reference voltage and a first voltage by dividing the power supply voltage provided through the switching section, and has a negative temperature coefficient characteristic. The second voltage generator generates the reference voltage and a second voltage having a positive temperature coefficient characteristic. The comparator compares the first voltage with the second voltage, and controls the switching section in accordance with the comparison result.
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