摘要 |
In this invention, in forming uneven pattern by dry etching in correspondence with shape of mask formed on a base, control is conducted such that the mask is retroceded or withdrawn following etching, and side wall shape of the uneven pattern results in inclined plane. In order to carry out control in this way, e.g., mask is formed by resin material, and dry etching is carried out by using etching gas including oxygen. As an etching apparatus, it is preferable to use magnetic Neutral Loop Discharge plasma etching apparatus.
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