发明名称 Semiconductor device, semiconductor device substrate, and methods of fabricating the same
摘要 A semiconductor device comprising a substrate with a cavity portion for mounting a semiconductor chip is provided to achieve a high reliability and to decrease a size and a fabricating cost. The cavity portion for mounting the semiconductor chip at the center portion of the substrate is formed by press forming with a projected portion of a die while adhering a press shapeable wiring body comprising a copper wiring which becomes wiring material, a barrier layer such as nickel alloy or the like, and a copper foil which is a carrier layer, to a resin substrate, so as to have wiring buried into a surface of the substrate and to form a ramp between an inner connection terminal portion connecting to the semiconductor chip and an external connection terminal portion connecting to an external connection terminals, the internal and external connection terminal portions being two end portions of the wiring.
申请公布号 US6617193(B1) 申请公布日期 2003.09.09
申请号 US20000680328 申请日期 2000.10.05
申请人 HITACHI CHEMICAL COMPANY, LTD. 发明人 TOSHIO YAMAZAKI;NAOKI FUKUTOMI;KAZUHISA SUZUKI;HIROSHI MORITA;YOSHIAKI WAKASHIMA;SUSUMU NAOYUKI;AKINARI KIDA
分类号 H01L21/48;H01L23/13;H01L23/36;H01L23/498;H01L29/06;(IPC1-7):H01L21/44 主分类号 H01L21/48
代理机构 代理人
主权项
地址