| 摘要 |
A mask pattern correction method, a photomask produced according to the method, and a storage medium storing a program to execute the method are disclosed. The method includes preparing pattern density-based correction data according to differences between mask patterns and patterns actually formed on a wafer by photolithography using the mask patterns, obtaining design patterns for a correction target area defined on a mask, calculating a density of the design patterns in the correction target area, retrieving correction data corresponding to the calculated density from the prepared pattern density-based correction data, and correcting the design patterns for the correction target area according to the retrieved correction data. |
