发明名称 |
Semiconductor device having heat detecting element and insulating cavity and method of manufacturing thereof |
摘要 |
The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.
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申请公布号 |
US6617659(B2) |
申请公布日期 |
2003.09.09 |
申请号 |
US20030368207 |
申请日期 |
2003.02.18 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KOMOBUCHI HIROYOSHI;CHATANI YOSHIKAZU;YAMADA TAKAHIRO;NISHIO RIEKO;UOZUMI HIROAKI;MASUYAMA MASAYUKI;YAMAGUCHI TAKUMI |
分类号 |
G01J5/10;H01L23/34;(IPC1-7):H01L27/14;H01L31/00 |
主分类号 |
G01J5/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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