| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for heating a semiconductor substrate on the surface of which a III-V group compound semiconductor containing phosphorus as a V group constituting element appears, such that the phosphorus is prevented from being drawn out. SOLUTION: Sn and In are weighed such that a molar ratio of In with respect to Sn ranges from 0.65 to 1.3, and an Sn-In-P alloy 110 is formed from the In and Sn and InP. A substrate W, the alloy 110, and a diffusion stock are accommodated in a heating diffusion furnace 1, and a jig is disposed such that a bottom plate 41a of a boat 41 faces the substrate W. Electric power is supplied to a heater 20 to heat the substrate W, the alloy 110, and the diffusion stock 120. The jig 40 is disposed such that after the substrate W reaches a predetermined temperature, a frame 42 is disposed above the substrate W. After a predetermined time passes, the jig 40 is disposed such that the bottom plate 41a faces the surface of the substrate W. Thereafter, the power supply to the heater 20 is interrupted to lower the temperature of the substrate W. COPYRIGHT: (C)2003,JPO
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