发明名称 REFLECTIVE MASK BLANK FOR EXPOSURE AND REFLECTIVE MASK FOR EXPOSURE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a reflective mask, and a reflective mask blank for manufacturing the same, capable of forming a high precision pattern by minimizing the reduction of the reflection rate at an intermediate layer. <P>SOLUTION: The reflective mask blank for exposure or a reflective mask for exposure has a multilayer reflection film for reflecting light toward the substrate surface, an intermediate layer on the multilayer reflection film, and an absorption film on the intermediate layer for absorbing the light. The material for the intermediate layer contains Si and one or more elements selected from the group consisting of Cr, Ru, and Rh. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003249434(A) 申请公布日期 2003.09.05
申请号 JP20020048545 申请日期 2002.02.25
申请人 HOYA CORP 发明人 SHIYOUKI TSUTOMU;SHIODA YUUKI
分类号 G03F1/22;G03F1/24;G03F1/68;H01L21/027;(IPC1-7):H01L21/027;G03F1/16;G03F1/08 主分类号 G03F1/22
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