| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same, which suppresses leakage current due to impurities variation that tends to occur in a high-resistance semiconductor substrate employed therein for raising the Q-value of a passive circuit element, and improves noise immunity of active elements on the high-resistance semiconductor substrate. SOLUTION: The semiconductor device comprises bipolar transistors 32, 33 formed on the principal surface of the semiconductor substrate 1. The bipolar transistors comprise first conductivity semiconductor layers 3a, 3b at the bottom thereof. The semiconductor device is provided with a second conductivity embedded layer 2, which is disposed inside the semiconductor substrate 1 so as to face the first conductivity semiconductor layers 3a, 3b. COPYRIGHT: (C)2003,JPO
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