发明名称 APPARATUS FOR ANALYZING SUBSTRATE CONTAMINATION AND METHOD THEREOF
摘要 According to the present invention, an apparatus for analyzing a substrate contaminant comprises a gaseous decomposition unit to decompose a bulk of a wafer to be analyzed in a gaseous form. The gaseous decomposition unit comprises: a chamber having an etching gas introducing unit disposed on an upper portion of a middle thereof to introduce etching gas; and a wafer chuck to perform a function of at least lifting the wafer to be analyzed in the chamber. When the wafer to be analyzed is lifted by the wafer chuck, an etching gas reaction space is formed between the wafer to be analyzed and an inner surface of an upper side of the chamber. The etching gas reaction space has a shape where a middle portion thereof is high and the height thereof becomes lower toward an edge thereof. According to the present invention, the etching gas reaction space is formed between the wafer and the inner surface of the upper side of the chamber to improve reaction efficiency and adjust a reaction speed in decomposing the bulk in a gaseous form. The middle portion of the etching gas reaction space is high and the height of the etching gas reaction space becomes lower toward the edge of the etching gas reaction space to improve etching uniformity.
申请公布号 KR101653987(B1) 申请公布日期 2016.09.05
申请号 KR20150050587 申请日期 2015.04.10
申请人 NVISANA;JUN, PIL KWON;KOO, DAE HWAN 发明人 JUN, PIL KWON;KOO, DAE HWAN;PARK, JUN HO;PARK, SANG HYUN;SUNG, YONG IK
分类号 H01L21/66;H01L21/02;H01L21/324;H01L21/683 主分类号 H01L21/66
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