| 摘要 |
<p>A thin-film solar cell (20) comprises an i-type microcrystalline silicon layer (13) that is formed in the production process under the condition that the oxygen concentration in the i-type microcrystalline silicon layer (13) is 4 × 1018 cm-3 and under the condition satisfying the following relation (1) 700 ≤ Tsub × Ic/Ia ≤ 1600 (1) where Ic is the peak intensity of a signal attributed to the crystal component, Ia is the peak intensity of a sign attributed to the amorphous component, and Tsub is the substrate temperature when they are measured by a Raman scattering measuring method. By specifying the best suited formation conditions of the oxygen concentration, substrate temperature, and crystallinity in the silicon layer when the i-type silicon layer is formed, a thin-film solar cell having a high photoelectric conversion efficiency and its production method can be provided.</p> |
