发明名称 |
Integrated circuits having and adjacent p-type doped regions having shallow trench isolation structures without liner layers therein therebetween and methods of forming same |
摘要 |
An integrated circuit substrate includes first and second adjacent p-type doped regions spaced-apart from one another. A trench in the integrated circuit substrate is between the first and second adjacent p-type doped regions. An insulator layer in the trench has a side wall, wherein the side wall is free of a layer that reduces a stress between the integrated circuit substrate and the insulator layer. <IMAGE> |
申请公布号 |
EP1213757(A3) |
申请公布日期 |
2003.09.03 |
申请号 |
EP20010128854 |
申请日期 |
2001.12.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH, YONG-CHUL;JIN, GYO-YOUNG |
分类号 |
H01L21/76;H01L21/762;H01L21/8234;H01L21/8242;H01L27/08;H01L27/10;H01L27/108 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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