| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device and a CVD system in which the bird's beak length is reduced as micromachining is performed using an LOCOS process. SOLUTION: An SiON film is formed thin on a silicon semiconductor substrate in order to relax stress in an nitride film being formed later. Low pressure CVD is employed in that process. For example, a plurality of wafers are loaded (carried) in a vertical low pressure CVD furnace. In this regard, the wafer is not carried in under high temperature conditions at the time of film deposition but carried in under conditions where the temperature is lowered by 35-45% as compared with high temperature conditions at the time of film deposition. After the wafer is carried in, temperature in the furnace is raised to bring about a film deposition temperature within a specified range and an SiON film is formed on the substrate while suppressing formation of an underlying natural oxide film. COPYRIGHT: (C)2003,JPO
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