| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of shortening a voltage start period after switching a control gate voltage. <P>SOLUTION: A voltage generating section 420 generating voltage driving control gates CG of a plurality of nonvolatile memory cells has a boosting circuit 430, a voltage control circuit EOCTL, and a control gate driver CGDRV. The voltage control circuit EOCTL has voltage input terminals 422, 423, and voltage output terminals 425, 425, and switches voltage VPCGH, VPCGL inputted from the boosting circuit 430 through the input terminals 422, 423 in accordance with a selection state (logic of PVPCG) of the nonvolatile memory cell to the voltage output terminals 425, 426 and outputs them. The voltage control circuit EOCTL outputs voltage VPCGH to both of the voltage output terminals 425, 426, and pre-drives control gate lines. In a period A before a pre-drive period, the circuit sets the device to a cut off state in which voltage from the boosting circuit 431 is not outputted, and outputs power voltage Vdd instead. <P>COPYRIGHT: (C)2003,JPO</p> |
