| 摘要 |
<P>PROBLEM TO BE SOLVED: To shorten a manufacturing process for forming a ridge in a semiconductor layer. <P>SOLUTION: After forming a striped p-side electrode 21, a p-side contact layer 17 and a p-type clad layer 16 are partly and selectively etched by an RIE method using a chlorine gas (Cl<SB>2</SB>) while the p-side electrode 21 is used as a mask, and the p-type clad layer 16 is exposed over the surface in a self- aligning way and a ridge part R is formed of an upper part of the p-type clad layer 16, p-side contact layer 17 and p-side electrode 21. The p-side electrode 21 has a structure that platinum, gold and nickel, or nickel, platinum, gold, and nickel are sequentially laminated from the side of the p-side contact layer 17, respectively. <P>COPYRIGHT: (C)2003,JPO |
