| 摘要 |
<P>PROBLEM TO BE SOLVED: To efficiently convert generated short wavelength light (ultraviolet beam) into visible light in a phosphor and to efficiently extract it out. <P>SOLUTION: The light emitting device has a nitride semiconductor light emitting device having an n-type layer, a p-type layer, a negative electrode, a positive electrode and a light emitting layer disposed between the n-type layer and the p-type layer and a coating layer including the particulate phosphor on the nitride semiconductor light emitting device. The surface of the nitride semiconductor light emitting device has a recess and an island part. The recess has an opening part where the minimum value of the intervals of the recess sides is larger than the average particle size of the particulate phosphor. The part stores not less than one particle of particulate phosphor. The forming method of the coating layer comprises a process for spraying application liquid including the phosphor from above the light emitting element in a mist shape while it is spirally rotated. <P>COPYRIGHT: (C)2003,JPO |
