| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS field effect transistor having a current detecting function, enhanced in detecting unit cell transistor capacity and in surge resistance without an increase in the MOS field effect transistor size or a degradation in electrical properties. SOLUTION: In this MOS field effect transistor 1, having a plurality of unit cells and a current detection function, the MOS transistor cells include at least one main unit cell 10 with its source electrically connected to a main source electrode 110 and at least one detecting unit cell 20 with its source electrically connected to a detecting source electrode 210. In the semiconductor substrate 100 with the main unit cell 10 and the detecting unit cell 20 formed therein, there is a barrier layer 150 filling up the gap in between the main unit cell 10 and the detecting unit cell 20, different in conductivity type from the substrate 100 and electrically connected to the detecting source electrode 210. COPYRIGHT: (C)2003,JPO
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