METHOD FOR PLASMA ETCHING OF INSULATING LAYERS

摘要

FIELD: microelectronics; integrated-circuit manufacture involving plasma etching of passivating coatings. SUBSTANCE: method involves plasma etching of double-layer passivating coating SiC-Si3N4 in gas mixture CF4-O2-Ar having following proportion of ingredients in parts by volume: (20 40) : 1 : - (40 60); high-frequency power supply to electrode holder followed by surface cleaning in gas mixture SF6-Ar having following proportion of ingredients in parts by volume: 1 : (40 60), process being conducted in a single cycle without reprecipitation of fluorine-carbon polymeric film on semiconductor wafer surface. EFFECT: enhanced quality of parts due to elimination of fluorine-carbon film formation. 1 cl