发明名称 FAULT-TOLERANT RANDOM-ACCESS MEMORY
摘要 FIELD: automation and computer engineering. SUBSTANCE: device has two coding units, syndrome computing unit, corrector, ten OR gates, AND gate unit, RS flip-flop, register, four EXCLUSIVE OR gates, two decoders, NOT gate, correction storage unit, correction flag computing unit, source and redundancy computing channels. EFFECT: enlarged functional capabilities. 1 cl, 2 dwg
申请公布号 RU2211492(C2) 申请公布日期 2003.08.27
申请号 RU20010111743 申请日期 2001.04.28
申请人 SERPUKHOVSKIJ VOENNYJ INSTITUT RAKETNYKH VOJSK;INSTITUT INZHENERNOJ FIZIKI ROSSIJSKOJ FEDERATSII 发明人 PAVLOV A.A.;ROMANENKO JU.A.;PAVLOV A.A.;SHANDRIKOV A.V.;PANFILOV I.V.
分类号 G11C29/00;G06F11/07 主分类号 G11C29/00
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