STRUCTURE AND PROCESS FOR VERTICAL TRANSISTOR TRENCH CAPACITOR DRAM CELL,申请号KR20027017576-传众专利搜索

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发明名称	STRUCTURE AND PROCESS FOR VERTICAL TRANSISTOR TRENCH CAPACITOR DRAM CELL
摘要
申请公布号	KR20030069801(A)	申请公布日期	2003.08.27
申请号	KR20027017576	申请日期	2001.06.25
申请人		发明人
分类号	H01L21/8242;H01L27/108	主分类号	H01L21/8242
代理机构		代理人
主权项
地址

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