| 摘要 |
PROBLEM TO BE SOLVED: To provide a radiation imaging unit low in noise-causing dark current and high in resolution by realizing a radiation detecting device excellent in sensitivity to incident radiation. SOLUTION: A carrier diffusion preventing layer 25 is provided between a charge releasing layer 20 and one or more of semiconductor layers, which are a first semiconductor layer 10 and a second semiconductor layer 30, for preventing the diffusion into the layer 20 of carriers at least from one of the layers 10, 30, which reduces the dark current attributable to the capturing level. By using this design, carrier capturing efficiency is increased for the realization of a highly sensitive radiation detecting device. COPYRIGHT: (C)2003,JPO
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