| 摘要 |
PROBLEM TO BE SOLVED: To prevent fault of a magnetic storage device by improving electro- migration tolerance of a magnetic storage device using a ferromagnetic tunnel junction element. SOLUTION: This magnetic storage device uses a ferroelectric tunnel junction element constituted so that a ferromagnetic tunnel junction element is formed by laminating fixed magnetizing layers and free magnetizing layers through tunnel barrier layers, word lines are wired in the direction of magnetization of the fixed magnetizing layers of the ferromagnetic tunnel junction element, bit lines are wired in the orthogonal direction of magnetization of the fixed magnetizing layers of the ferromagnetic tunnel junction element, and two different storage states can be written in the magnetic tunnel junction element by reversing an energizing direction for the bit lines. And an energizing direction for the word lines is reversed in the direction of the same direction as a magnetizing direction of the fixed magnetizing layers or the reverse direction as that when write-in is performed for the ferromagnetic tunnel junction element. COPYRIGHT: (C)2003,JPO
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