| 发明名称 |
CERAMIC SUBSTRATE FOR SEMICONDUCTOR MANUFACTURING AND FOR TESTING DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a ceramic substrate for achieving the practically uniform distribution of temperature on the face of the ceramic substrate where a semiconductor wafer is treated. <P>SOLUTION: The ceramic substrate has a conductive body on the surface or the inside thereof. The ceramic substrate that contains oxygen has a disk shape with a diameter more than 250 mm and a thickness of 25 mm or below. <P>COPYRIGHT: (C)2003,JPO</p> |
| 申请公布号 |
JP2003234262(A) |
申请公布日期 |
2003.08.22 |
| 申请号 |
JP20020323015 |
申请日期 |
2002.11.06 |
| 申请人 |
IBIDEN CO LTD |
发明人 |
HIRAMATSU YASUJI;ITO YASUTAKA |
| 分类号 |
H05B3/20;H01L21/02;H01L21/66;H01L21/68;H01L21/683;H05B3/10;H05B3/74;(IPC1-7):H01L21/02 |
主分类号 |
H05B3/20 |
| 代理机构 |
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代理人 |
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