发明名称 Resonator-type semiconductor optical modulator with asymmetrical electrode structure
摘要 A resonance-type semiconductor optical modulator has an asymmetrical electrode structure in which the microwave power is applied to the semiconductor optical modulation element via a resonator. The resulting higher modulation voltage provides high modulation efficiency while controlling the amount of power consumption. The semiconductor optical modulation element includes an open-ended stub, a short-ended stub connected to the open-ended stub, a feeding line connected to both stubs and common electrodes. The stubs are formed in contact and the semiconductor optical modulation element is connected to the open-ended stub. Otherwise, the resonance-type semiconductor optical modulator can include a semiconductor optical modulation element, a first open-ended stub, a second open-ended stub connected to the first open-ended stub and having a different length than the first open-ended stub, a feeding line that is electromagnetically connected to both open-ended stubs, and common electrodes, in which the first and second open-ended stubs are formed in mutual contact and the semiconductor optical modulation element is connected to an open-ended stub portion other than a portion connecting the feeding line to the open-ended stubs.
申请公布号 US2003156312(A1) 申请公布日期 2003.08.21
申请号 US20030369546 申请日期 2003.02.21
申请人 COMMUNICATIONS RESEARCH LAB., IND. ADMIN. INST. 发明人 KAWANISHI TETSUYA;IZUTSU MASAYUKI
分类号 G02F1/015;G02F1/017;G02F1/025;G02F1/03;(IPC1-7):G02F1/00;G02B26/00;G02F1/07 主分类号 G02F1/015
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