发明名称 |
III nitride compound semiconductor element an electrode forming method |
摘要 |
An AlN buffer layer 2; a silicon (Si)-doped GaN high-carrier-concentration n+ layer 3; an Si-doped n-type Al0.07Ga0.93N n-cladding layer 4; an Si-doped n-type GaN n-guide layer 5; an active layer 6 having a multiple quantum well (MQW) structure, and including a Ga0.9In0.1N well layer 61 (thickness: about 2 nm) and a Ga0.97In0.03N barrier layer 62 (thickness: about 4 nm), the layers 61 and 62 being laminated alternately; an Mg-doped GaN p-guide layer 7; an Mg-doped Al0.07Ga0.93N p-cladding layer 8; and an Mg-doped GaN p-contact layer 9 are successively formed on a sapphire substrate. A p-electrode 10 is formed of a film of titanium nitride (TiN) or tantalum nitride (TaN) (thickness: 50 nm). The contact resistance of this electrode is reduced through heat treatment.
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申请公布号 |
US2003155575(A1) |
申请公布日期 |
2003.08.21 |
申请号 |
US20030239895 |
申请日期 |
2003.02.19 |
申请人 |
SHIBATA NAOKI;UEMURA TOSHIYA;ASAI MAKOTO;KOIDE YASUO;MURAKAMI MASANORI |
发明人 |
SHIBATA NAOKI;UEMURA TOSHIYA;ASAI MAKOTO;KOIDE YASUO;MURAKAMI MASANORI |
分类号 |
C30B29/38;H01L21/205;H01L21/24;H01L21/28;H01L21/285;H01L29/43;H01L33/00;H01L33/06;H01L33/12;H01L33/32;H01L33/40;H01S5/02;H01S5/042;H01S5/323;H01S5/343;(IPC1-7):H01L27/15;H01L31/12 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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