| 摘要 |
One or more deep-array implants under the photosensitive region of a semiconductor substrate are conducted to improve optical cross-talk between pixel cells. According to an embodiment of the present invention, one or more deep-array implants of a first conductivity type are used to dope predefined regions of a well of a second conductivity type. This way, first conductivity type dopants from the one or more deep-array implants counterdope second conductivity type dopants from the predefined regions of the well. The dosage and energy of each deep-array implant may be optimized so that the collection of signal carriers by the photosensitive region and the photoresponse for different wavelengths are maximized.
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