| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of responding to the reduction in pad interval and the shrinkage in pad size, while at the same time suppressing the increase in cost, and also to provide a method of manufacturing the same. <P>SOLUTION: Conic dents 3b including openings 3a are formed in an insulation film 3, with the surfaces of the dents 3b intentionally roughened by ashing. In each dent 3b, a metal interconnection layer 4 is formed by a printing method so as to be swollen from the insulation film 3. Furthermore, an electroless plating film 5 is formed to cover the metal interconnection film 4. The roughened surface of the dent 3b of the insulation film 3 increases the adhesion between the insulation film 3 and the metal interconnection layer 4. Since the metal interconnection layer 4 is covered by the electroless plating film 5, the metal interconnection layer 4 is hardly disconnected, and at the same time, the generation of migration due to the movement of metal atoms inside the metal interconnection layer 4 can be prevented. Moreover, a high solder wettability and a high connection reliability can be secured due to the existence of the electroless plating film 5. <P>COPYRIGHT: (C)2003,JPO |
