| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistance effect sensor in which the generation of a Barkhausen noise can be suppressed by preventing a magnetic domain such as a closure domain from being formed in a free magnetization layer, by a galvano magnetic field to be guided to the intra-film surface direction by operation in a mode for electrifying a sense current vertically to a film surface. SOLUTION: The magneto resistance effect sensor has a magnetoresistance effect film (15) having a fixed magnetization layer (153) and a free magnetization layer (151) provided while sandwiching a non-magnetic intermediate layer (152), fixing magnetization inside the film surface of the fixed magnetization layer (153), and orienting the axis of easy magnetization approximately vertically to the film surface of the free magnetization layer (151); and a pair of electrode layers for electrifying the sense current vertically to the film surface of the magnetoresistance effect film (15). COPYRIGHT: (C)2003,JPO
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