发明名称 ELECTRON BEAM EXPOSURE METHOD AND RETICULE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an electron beam exposure method and a reticule, for exposing a doughnut pattern, a leaf-pattern, etc. <P>SOLUTION: A reticule 100 comprises a first reticule 101 and a second reticule 103. A pattern (main pattern) is formed at the first reticule 101 where each end of a plurality of linear elements which are divisions of an element graphic of a pattern P is so extended as to be connected to a membrane part (skirt part) at the end of a pattern region on the reticule or to the other linear element. On the second reticule 103, a pattern in reverse to that of a linear element E (extended linear element) is formed. Using the first reticule 101 and the second reticule 103, the main pattern and the reversal pattern are stacked in the same region on a sensitized board for exposure and transfer. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003229349(A) 申请公布日期 2003.08.15
申请号 JP20020024978 申请日期 2002.02.01
申请人 NIKON CORP 发明人 ARAI OSAMU
分类号 G03F1/20;G03F7/20;H01J37/305;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/20
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