| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To enable defect repair of a mask with high accuracy and at a high grade by making it possible to perform processing meeting the three-dimensional shapes of defects with an ion beam defect repair system. <P>SOLUTION: The ion beam dose distribution necessary for defect repair is determined by combining the three-dimensional measurement of the defect by an atomic force microscope and shape simulation and selective scanning of an ion beam 56 is performed while assist gas is supplied from a gas gun 6 in correcting the dark defect and while a gaseous raw material for a shielding film is supplied in correcting the illuminated defect in accordance with the calculated dose distribution, by which the defect 3 is subjected to the defect repair of the high accuracy and the high grade. <P>COPYRIGHT: (C)2003,JPO</p> |
