| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory device in which a random access characteristic is improved, the number of times of rewriting can be reduced, and the supremum of the number of times of disturbance can be easily controlled, making the most of a nonvolatile characteristic and a high integration characteristic of a cross point type ferroelectric memory and a memory system using it. <P>SOLUTION: This device comprises a cross point type ferroelectric memory 30 and a write-back type cache memory 40 being able to perform random access, access for the cross point type ferroelectric memory 30 is performed through a second memory. Thereby, data in a cache memory can be accessed randomly and freely, while access for the cross point type memory is performed only in miss-hit, the number of times of rewriting of data can be reduced. <P>COPYRIGHT: (C)2003,JPO</p> |
