| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device of high-speed driving and high reliability, with a TFT in which a semiconductor layer, crystallized using CW laser, is used as an active layer. SOLUTION: The semiconductor layer which is crystallized using CW laser comprises both a semiconductor layer of large crystal grain and a semiconductor layer of fine crystal grain, depending on the distribution of energy density, in the width direction of irradiated laser. Although the former shows proper electrical characteristics, the latter has poor electrical characteristics because the movement of electric charges is blocked in a poor condition in the grain boundary, resulting in inconvenience when used as an active layer for a transistor. Therefore, a circuit is arranged so that all active layers of the TFT are formed from a semiconductor layer of large crystal grain. COPYRIGHT: (C)2003,JPO
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