BASE FEEDING LINE OF HETEROJUNCTION BIPOLAR TRANSISTOR

摘要

PURPOSE: A base feeding line of a heterojunction bipolar transistor(HBT) is provided to improve linearity by eliminating a problem of a voltage difference and a phase difference in a base feeding so that the power and frequency characteristics of a transistor are improved. CONSTITUTION: A plurality of unit bipolar transistors(30) are electrically insulated from each other. Each unit bipolar transistor includes a base, an emitter, a collector, a base electrode(17) connected to the base, an emitter electrode(18) connected to the emitter and a collector electrode(16) connected to the collector. A base feeding metal of at least two layers insulated from each other has a stacked structure, applying a single to the base.