Power metal oxide semiconductor integrated circuit

摘要

A semiconductor device including: a load connected between outputs of power amplifiers; a mirror current generating circuit connected to the power amplifiers in an output side of the power amplifiers for generating a mirror current which is smaller than and proportional to a load current applied to the load, and the mirror current generating circuit being connected out of a current path through the load between the outputs of the power amplifiers; and a mirror current detecting circuit connected to the mirror current generating circuit for detecting the mirror current.