| 摘要 |
A semiconductor device includes an active layer of a first conductive type. A base layer of a second conductive type is selectively formed on a surface region of said active layer. A source layer of the first conductive type is selectively formed on a surface region of the base layer. An anode layer of the second conductive type is selectively formed on a surface region of the active layer, the anode layer being spaced from the base layer. A drain layer of the first conductive type is formed on a surface region between the base layer and the anode layer. A resistive layer of the first conductive type is formed on a surface region between the base layer and the drain layer. And, a gate electrode is formed above a region of the base layer between the source layer and the active layer, a gate insulating film being disposed between the base layer and the gate electrode. A source electrode is formed on the surface of the base layer and the source layer, while a drain electrode is formed on the surface of the drain layer and the anode layer. |
